On 15 Mar 2004 20:18:48 GMT, (e-mail address removed) (Nick Maclaren) wrote:
Practically any exposition that isn't just a snow job is going to
assume that you understand effective mass:
http://en.wikipedia.org/wiki/Effective_mass
If you swallow hard, that page contains a big piece of the puzzle. A
hole or an electron in a solid can be imagined to be accelerated by an
imposed electric field as if it were a free particle with positive or
negative charge, respectively with an effective mass m* (equation
given).
The effective mass can be calculated as a second derivative of the
dispersion relation E(k), where E is energy and k is the wavenumber
(equation also given).
If you need a deeper understanding of effective mass, you probably
want to consult a book on solid state physics, like Kittel, but, since
you gave up on qm, that's probably not going to get you very far.
What does the straining of silicon have to do with this? The crystal
structure scatters waves just like the rulings of a diffraction
grating. The details of that scattering produce the shape of the
energy surface E(k).
Just as you can change the scattering properties of a diffraction
grating by changing the spacing of the rulings, stretching or
compressing the silicon crystal lattice changes the scattering
properties and thus the dispersion relation and thus the effective
mass of holes and electrons.
If you do it right, you can reduce the effective mass, thus increasing
the acceleration of the hole or electron for any given imposed
electric field--the "increased mobility" that is constantly being
referred to in the snow jobs.
The stretching and compression are achieved by growing the strained
silicon on a crystal substrate whose natural spacing is greater or
lesser than the natural spacing of the silicon crystal. Assuming the
substrate is thicker than the strained layer, it will tend to impose
its spacing on the strained silicon layer, thus changing the
dispersion relation, thus changing the effective mass.
The floor is now open to nit-pickers.
RM