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Hynix claims first DDR3 validation
Mark LaPedus
EE Times
(05/01/2007 10:21 AM EDT)
SAN JOSE, Calif. — South Korea's Hynix Semiconductor Inc. claims to have received the industry's first validation on its DDR3 SDRAMs and modules from Intel Corp. However, there is still no chipset support for DDR3 SDRAMs in the market.
Meanwhile, based on Hynix' ''three-dimensional transistor'' architecture, the company's newly-validated DDR3 products are 1-gigabit DDR3 SDRAM components manufactured on the company's 80-nm process technology
These devices have operating speeds of 800- and 1066-MHz at 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800-MHz, and 7-7-7 for 1066-MHz, according to Hynix.
In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 2 percent, compared to the present generation DDR2.
Mass production of the 1-Gbit DDR3 on the 80-nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66-nm process beginning in late 2007.
DDR3 is the next generation DRAM interface ,which is expected to succeed the current mainstream DDR2 products. DDR3 is expected to emerge towards the end of the year. According to market research firm iSuppli, DDR3 will account for 25 percent of total DRAM shipments by the end of 2008 and dominate the market by 2010.
Mark LaPedus
EE Times
(05/01/2007 10:21 AM EDT)
SAN JOSE, Calif. — South Korea's Hynix Semiconductor Inc. claims to have received the industry's first validation on its DDR3 SDRAMs and modules from Intel Corp. However, there is still no chipset support for DDR3 SDRAMs in the market.
Meanwhile, based on Hynix' ''three-dimensional transistor'' architecture, the company's newly-validated DDR3 products are 1-gigabit DDR3 SDRAM components manufactured on the company's 80-nm process technology
These devices have operating speeds of 800- and 1066-MHz at 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800-MHz, and 7-7-7 for 1066-MHz, according to Hynix.
In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 2 percent, compared to the present generation DDR2.
Mass production of the 1-Gbit DDR3 on the 80-nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66-nm process beginning in late 2007.
DDR3 is the next generation DRAM interface ,which is expected to succeed the current mainstream DDR2 products. DDR3 is expected to emerge towards the end of the year. According to market research firm iSuppli, DDR3 will account for 25 percent of total DRAM shipments by the end of 2008 and dominate the market by 2010.